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? semiconductor components industries, llc, 2001 august, 2001 rev. 2 1 publication order number: ngd15n41cl/d ngd15n41clt4, ngb15n41clt4, ngp15n41cl preferred device ignition igbt 15 amps, 410 volts nchannel dpak, d 2 pak and to220 this logic level insulated gate bipolar transistor (igbt) features monolithic circuitry integrating esd and overvoltage clamped protection for use in inductive coil drivers applications. primary uses include ignition, direct fuel injection, or wherever high voltage and high current switching is required. ? ideal for coilonplug applications ? dpak package offers smaller footprint and increased board space ? gateemitter esd protection ? temperature compensated gatecollector voltage clamp limits stress applied to load ? integrated esd diode protection ? new design increases unclamped inductive switching (uis) energy per area ? low threshold voltage to interface power loads to logic or microprocessor devices ? low saturation voltage ? high pulsed current capability ? optional gate resistor (r g ) and gateemitter resistor (r ge ) maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collectoremitter voltage v ces 440 v dc collectorgate voltage v cer 440 v dc gateemitter voltage v ge 15 v dc collector currentcontinuous @ t c = 25 c pulsed i c 15 50 a dc a ac esd (human body model) r = 1500 w , c = 100 pf esd 8.0 kv esd (machine model) r = 0 w , c = 200 pf esd 800 v total power dissipation @ t c = 25 c derate above 25 c p d 107 1.4 watts w/ c operating and storage temperature range t j , t stg 55 to +175 c 15 amps 410 volts v ce(on) 2.1 v @ i c = 10 a, v ge 4.5 v http://onsemi.com c e g r ge r g see detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. ordering information see general marking information in the device marking section on page 8 of this data sheet. device marking information to220ab case 221a style 9 1 2 3 4 1 2 3 4 d 2 pak case 418b style 4 dpak case 369a style 7 1 2 3 4 preferred devices are recommended choices for future use and best overall value.
ngd15n41clt4, ngb15n41clt4, ngp15n41cl http://onsemi.com 2 unclamped collectortoemitter avalanche characteristics (55 t j 175 c) characteristic symbol value unit single pulse collectortoemitter avalanche energy v cc = 50 v, v ge = 5.0 v, pk i l = 16.6 a, l = 1.8 mh, starting t j = 25 c v cc = 50 v, v ge = 5.0 v, pk i l = 15 a, l = 1.8 mh, starting t j = 125 c e as 250 200 mj thermal characteristics characteristic symbol value unit thermal resistance, junction to case r q jc 1.4 c/w thermal resistance, junction to ambient dpak (note 1.) r q ja 100 d 2 pak (note 1.) r q ja 50 to220 r q ja 62.5 maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds t l 275 c electrical characteristics characteristic symbol test conditions temperature min typ max unit off characteristics collectoremitter clamp volta g e bv ces i c = 2.0 ma t j = 40 c to 380 410 440 v dc collector emitter clam voltage bv ces i c = 2 . 0 ma t j = 40 c to 150 c 380 410 440 v dc i c = 10 ma t j = 40 c to 150 c 380 410 440 zero gate voltage collector current i ces v 350 v t j = 25 c 2.0 20 m a dc g ces v ce = 350 v, v ge = 0 v t j = 150 c 10 40* m dc v ge = 0 v t j = 40 c 1.0 10 reverse collectoremitter leakage current i ecs v24v t j = 25 c 0.7 2.0 ma g ecs v ce = 24 v t j = 150 c 12 25* t j = 40 c 0.1 1.0 reverse collectoremitter clamp voltage b vces(r) i75a t j = 25 c 27 33 37 v dc g vces(r) i c = 75 ma t j = 150 c 30 36 40 dc t j = 40 c 25 31 35 gateemitter clamp voltage bv ges i g = 5.0 ma t j = 40 c to 150 c 11 13 15 v dc gateemitter leakage current i ges v ge = 10 v t j = 40 c to 150 c 384 640 1000 m a dc gate resistor (optional) r g t j = 40 c to 150 c 70 w gate emitter resistor r ge t j = 40 c to 150 c 10 16 26 k w on characteristics (note 2.) gate threshold voltage v ge(th) i10a t j = 25 c 1.1 1.4 1.9 v dc g ge(th) i c = 1.0 ma, v ge = v ce t j = 150 c 0.75 1.0 1.4 dc v ge = v ce t j = 40 c 1.2 1.6 2.1* threshold temperature coefficient (negative) 3.4 mv/ c 1. when surface mounted to an fr4 board using the minimum recommended pad size. 2. pulse test: pulse width 300 m s, duty cycle 2%. *maximum value of characteristic across temperature range.
ngd15n41clt4, ngb15n41clt4, ngp15n41cl http://onsemi.com 3 electrical characteristics (continued) characteristic symbol test conditions temperature min typ max unit on characteristics (continued) (note 3.) collectortoemitter onvoltage v ce(on) i 60a t j = 25 c 1.0 1.6 1.8 v dc g ce(on) i c = 6.0 a, v ge = 4. 0 v t j = 150 c 0.9 1.5 1.8 dc v ge = 4 . 0 v t j = 40 c 1.1 1.65 1.9* i 80a t j = 25 c 1.3 1.8 2.0* i c = 8.0 a, v ge = 4. 0 v t j = 150 c 1.2 1.7 1.9 v ge = 4 . 0 v t j = 40 c 1.4 1.8 2.0* i10a t j = 25 c 1.4 2.0 2.2 i c = 10 a, v ge = 4. 0 v t j = 150 c 1.5 2.0 2.3* v ge = 4 . 0 v t j = 40 c 1.4 2.0 2.2 i10a t j = 25 c 1.3 1.9 2.1 i c = 10 a, v ge = 4. 5 v t j = 150 c 1.3 1.9 2.1 v ge = 4 . 5 v t j = 40 c 1.4 1.95 2.1* forward transconductance gfs v ce = 5.0 v, i c = 6.0 a t j = 40 c to 150 c 8.0 15 25 mhos dynamic characteristics input capacitance c iss v25vv0v t40 c 400 650 1000 pf output capacitance c oss v cc = 25 v, v ge = 0 v f = 1. 0 mhz t j = 40 c to 1 50 c 30 55 100 transfer capacitance c rss f = 1 . 0 mhz 150 c 3.0 4.5 8.0 switching characteristics turnoff delay time (inductive) t d(off) v cc = 300 v, i c = 6.5 a r 10k w l 300 h t j = 25 c 4.0 10 m sec y( ) d(off) cc , c r g = 1.0 k w , l = 300 m h t j = 150 c 4.5 10 m fall time (inductive) t f v cc = 300 v, i c = 6.5 a r 10k w l 300 h t j = 25 c 6.0 12 () f cc , c r g = 1.0 k w , l = 300 m h t j = 150 c 10 12 turnoff delay time (resistive) t d(off) v cc = 300 v, i c = 6.5 a r 10k w r46 w t j = 25 c 3.0 10 m sec y( ) d(off) cc , c r g = 1.0 k w , r l = 46 w , t j = 150 c 3.5 10 m fall time (resistive) t f v cc = 300 v, i c = 6.5 a r 10k w r46 w t j = 25 c 8.0 15 () f cc , c r g = 1.0 k w , r l = 46 w , t j = 150 c 12 15 turnon delay time t d(on) v cc = 10 v, i c = 6.5 a r 10k w r15 w t j = 25 c 0.7 4.0 m sec y d(on) cc , c r g = 1.0 k w , r l = 1.5 w t j = 150 c 0.7 4.0 m rise time t r v cc = 10 v, i c = 6.5 a r 10k w r15 w t j = 25 c 4.0 7.0 r cc , c r g = 1.0 k w , r l = 1.5 w t j = 150 c 5.0 7.0 3. pulse test: pulse width 300 m s, duty cycle 2%. *maximum value of characteristic across temperature range.
ngd15n41clt4, ngb15n41clt4, ngp15n41cl http://onsemi.com 4 typical electrical characteristics (unless otherwise noted) gate to emitter voltage (volts) 0 40 6 10 4 2 i c, collector current (amps) 0 60 20 30 50 8 1357 0 40 6 10 4 2 i c, collector current (amps) 0 v ce , collector to emitter voltage (volts) figure 1. output characteristics figure 2. output characteristics 0 25 20 15 10 2 1.5 1 5 30 0 0.5 2.5 3 3.5 figure 3. output characteristics v ge , gate to emitter voltage (volts) figure 4. transfer characteristics i c, collector current (amps) figure 5. collectortoemitter saturation voltage versus junction temperature figure 6. collectortoemitter voltage versus gatetoemitter voltage 60 v ge = 10 v v ce , collector to emitter voltage (volts) 20 30 50 8 1357 5 v t j = 25 c t j = 40 c v ge = 10 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v t j = 150 c 4 4.5 5 4.5 v 4 v 3.5 v 3 v 2.5 v 0 40 6 10 4 2 i c, collector current (amps) 0 60 20 30 50 8 1357 v ce , collector to emitter voltage (volts) t j = 150 c v ge = 10 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v 2.5 t j , junction temperature ( c) v ce , collector to emitter voltage (volts) 50 50 75 25 0 100 25 125 1.0 3.0 0.5 2.0 0.0 3.5 4.0 1.5 150 v ge = 5 v i c = 25 a i c = 20 a i c = 15 a i c = 10 a i c = 5 a 2.5 collector to emitter voltage (volts) 367 58 49 1 0.5 2 0 3 1.5 10 i c = 15 a i c = 10 a i c = 5 a v ce = 10 v t j = 25 c t j = 40 c t j = 25 c
ngd15n41clt4, ngb15n41clt4, ngp15n41cl http://onsemi.com 5 temperature ( c) threshold voltage (volts) 50 50 70 10 10 90 30 130 150 mean + 4 s mean 4 s mean gate to emitter voltage (volts) 1.2 0.2 0 2 0.6 1 1.6 10000 1000 100 10 0 6 4 0 8 10 12 figure 7. collectortoemitter voltage versus gatetoemitter voltage figure 8. capacitance variation figure 9. gate threshold voltage versus temperature figure 10. minimum open secondary latch current versus temperature temperature ( c) i l , latch current (amps) figure 11. typical open secondary latch current versus temperature v ce , collector to emitter voltage (volts) figure 12. inductive switching fall time versus temperature temperature ( c) c, capacitance (pf) switching time ( m s) 0 120 60 40 20 140 180 50 50 75 25 0 100 25 125 10 20 5 15 0 25 30 t j = 150 c 175 v cc = 50 v v ge = 5 v r g = 1000 w l = 6 mh 200 80 100 160 50 50 70 30 10 90 30 130 150 t f v cc = 300 v v ge = 5 v r g = 1000 w i c = 10 a l = 300 m h c rss c iss c oss 2.5 367 58 49 1 0.5 2 0 3 1.5 10 i c = 15 a i c = 10 a i c = 5 a collector to emitter voltage (volts) 1 30 110 0.4 0.8 1.4 1.8 150 l = 3 mh l = 2 mh temperature ( c) i l , latch current (amps) 50 50 75 25 0 100 25 125 10 20 5 15 0 25 30 175 v cc = 50 v v ge = 5 v r g = 1000 w l = 6 mh 150 l = 3 mh l = 2 mh 2 10 110 t d(off)
ngd15n41clt4, ngb15n41clt4, ngp15n41cl http://onsemi.com 6 0.2 0.00001 0.001 0.0001 0.1 10 1 0.01 0.01 t,time (s) r(t), transient thermal resistance ( c/watt) single pulse 110 0.1 0.05 0.02 0.01 100 1000 duty cycle = 0.5 0.1 figure 13. transient thermal resistance (nonnormalized junctiontoambient mounted on fixture in figure 14) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 t j(pk) t a = p (pk) r q ja (t) r q jc @ r(t) for t 0.2 s 4 1.5 4 4 0.125 figure 14. test fixture for transient thermal curve (48 square inches of 1/8 thick aluminum)
ngd15n41clt4, ngb15n41clt4, ngp15n41cl http://onsemi.com 7 100 10 0.1 1 0.01 figure 15. single pulse safe operating area (mounted on an infinite heatsink at t a = 25 c) collectoremitter voltage (volts) figure 16. single pulse safe operating area (mounted on an infinite heatsink at t a = 125 c) collectoremitter voltage (volts) collector current (amps) collector current (amps) 1 100 10 1000 100 10 0.1 1 0.01 1 100 10 1000 100 m s 10 ms 1 ms 100 ms dc 100 m s 10 ms 1 ms 100 ms dc 100 10 0.1 1 0.01 collectoremitter voltage (volts) collectoremitter voltage (volts) collector current (amps) collector current (amps) 1 100 10 1000 100 10 0.1 1 0.01 1 100 10 1000 t 1 = 1 ms, d = 0.05 i (pk) t 1 t 2 duty cycle, d = t 1 /t 2 i (pk) t 1 t 2 duty cycle, d = t 1 /t 2 t 1 = 2 ms, d = 0.10 t 1 = 3 ms, d = 0.30 t 1 = 1 ms, d = 0.05 t 1 = 2 ms, d = 0.10 t 1 = 3 ms, d = 0.30 figure 17. pulse train safe operating area (mounted on an infinite heatsink at t c = 25 c) figure 18. pulse train safe operating area (mounted on an infinite heatsink at t c = 125 c)
ngd15n41clt4, ngb15n41clt4, ngp15n41cl http://onsemi.com 8 ordering information device package type shipping ngd15n41cl dpak 75 units/rail ngd15n41clt4 dpak 2500/tape & reel ngb15n41clt4 d 2 pak 800/tape & reel ngp15n41cl to220 50 units/rail marking diagrams gx15n41 = device code x = d, b, or p y = year ww = work week gx15n41 yww 1 gate 3 emitter 4 collector gx15n41 yww 1 gate 3 emitter 4 collector 2 collector 2 collector to220ab case 221a style 9 d 2 pak case 418b style 4 dpak case 369a style 7 1 gate 4 collector 2 collector 3 emitter gx15n41 yww
ngd15n41clt4, ngb15n41clt4, ngp15n41cl http://onsemi.com 9 package dimensions d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 --- 0.51 --- v 0.030 0.050 0.77 1.27 z 0.138 --- 3.51 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 style 7: pin 1. gate 2. collector 3. emitter 4. collector dpak case 369a13 issue ab
ngd15n41clt4, ngb15n41clt4, ngp15n41cl http://onsemi.com 10 package dimensions style 4: pin 1. gate 2. collector 3. emitter 4. collector d 2 pak case 418b03 issue d notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. seating plane s g d t m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 b m b
ngd15n41clt4, ngb15n41clt4, ngp15n41cl http://onsemi.com 11 package dimensions style 9: pin 1. gate 2. collector 3. emitter 4. collector to220 threelead to220ab case 221a09 issue aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j
ngd15n41clt4, ngb15n41clt4, ngp15n41cl http://onsemi.com 12 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ngd15n41cl/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada

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